DescriptionThe MGF1923 is a type of tape carrier small signal gas fet with an N-channel schottky gate, which is designed for util ize in S to Ku band amplifier. The MGF1923 is mounted in the super 12 tape. features of MGF1923 are: (1)high linear power gain: GLP=11dB(typ)@ 12GHz; (2)high output pow...
MF1293: DescriptionThe MGF1923 is a type of tape carrier small signal gas fet with an N-channel schottky gate, which is designed for util ize in S to Ku band amplifier. The MGF1923 is mounted in the super 1...
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The MGF1923 is a type of tape carrier small signal gas fet with an N-channel schottky gate, which is designed for util ize in S to Ku band amplifier. The MGF1923 is mounted in the super 12 tape. features of MGF1923 are: (1)high linear power gain: GLP=11dB(typ)@ 12GHz; (2)high output power at 1dB gain compression: P1dB=13dBm(typ)@ 12GHz.
The absolute maximum ratings and electrical characteristics of the MGF1923 can be summarized as:(1)gate to drain voltage:-0V; (2)gate to source:-6V; (3)drain current: 80mA; (4)total power dissipation: 240mW; (5)channel tempera ture: 175; (6)storage temperature:-55 to 175. Electrical characteristics: (1)gate to drain breakdown voltage(IG=-100uA):-6V min; (2)gate to source breakdown voltage(IG=-100uA):-6V min; (3)gate to source breakdown curr ent(VGS=-3V, VDS=0V): 10uA max; (4)saturated drain current(VGS=0V, VDS=3V): 40mA min, 60mA typ and 80mA ma x; (5)gate to source cutoff voltage(VDS=3V, ID=100uA):-0.5V min and-3.5V max; (6)Tran conductance(DS=3V, ID= 10mA): 20ms min and 35ms typ; (7)minimum noise figure(VDS=3V, ID=10mA, f=12GHz): 2.3dB max; (8)thermal resist ance(Vf method): 626/W, etc.
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