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MF1011B900Y

Features: · Suitable for short and medium pulse applications up to 100 ms pulse width, duty factor 10%· Diffused emitter ballasting resistors improve ruggedness· Interdigitated emitter-base structure provides high emitter efficiency· Gold metallization with barrier realizes very stable characteris...

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SeekIC No. : 004419258 Detail

MF1011B900Y: Features: · Suitable for short and medium pulse applications up to 100 ms pulse width, duty factor 10%· Diffused emitter ballasting resistors improve ruggedness· Interdigitated emitter-base structur...

MF1011B900Y Data Sheet

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Part Number:
MF1011B900Y
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· Suitable for short and medium pulse applications up to 100 ms pulse width, duty factor 10%
· Diffused emitter ballasting resistors improve ruggedness
· Interdigitated emitter-base structure provides high emitter efficiency
· Gold metallization with barrier realizes very stable characteristics and excellent lifetime
· Multicell geometry improves power sharing and reduces thermal resistance
· Internal input and output prematching networks allow an easier design of circuits.


Application

Intended for use in common base class C broadband pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 MHz to 1090 MHz band. Also suitable for medium pulse, heavy duty operation within this band.


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
-
65
V
VCES
collector-emitter voltage
RBE = 0
-
65
V
VCEO
collector-emitter voltage
open base
-
15
V
VEBO
emitter-base voltage
open collector
-
3
V
ICM
peak collector current
tp = 10 ms; d = 1%
-
50
A
Ptot
total power dissipation
Tmb < 75 °C; tp 10 ms; d 1%
-
1750
W
Tstg
storage temperature
-65
+200
°C
Tj
junction temperature
-
200
°C
Tsld
soldering temperature
t 10 s; note 1
-
235
°C



Description

MF1011B900Y NPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with base connected to flange.




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