Features: ·Advanced trench process technology·High Density Cell Design For Ultra Low On-Resistance·Specially Designed for DC/DC Converters and Motor Drivers·Fully Characterized Avalanche Voltage and CurrentSpecifications PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS...
ME70N03: Features: ·Advanced trench process technology·High Density Cell Design For Ultra Low On-Resistance·Specially Designed for DC/DC Converters and Motor Drivers·Fully Characterized Avalanche Voltage and...
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PARAMETER |
SYMBOL |
RATINGS |
UNIT | |
Drain-Source Voltage |
VDSS |
-30 |
V | |
Gate-Source Voltage |
VGSS |
±20 |
V | |
Continuous Drain Current (Note 3) |
ID |
60 |
A | |
Pulsed Drain Current (Note 1, 2) |
IDM |
350 |
A | |
Total Power Dissipation | TA=25 |
PD |
70 |
W |
TA=100 |
42 | |||
Junction Temperature |
TJ |
-55 to 150
|
||
Storage Temperature Range |
TSTG | |||
Avalanche Energy with Single Pulse ID=50A,VDD=25V,L=0.5mH |
EAS |
300 |
mJ | |
Junction-to-Case Thermal Resistance |
RJA |
1.8 | ||
Junction-to-Ambient Thermal Resistance PCD mounted)2) |
RJA |
40 |
/W |