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MDS35

Features: Symbol Value Unit I T(RMS) 50-70-85 A VDRM/VRRM 800 and 1200 V IGT 50 and 100 mAPinoutSpecifications Symbol Parameter Value Unit 35 50 80 I T(RMS) RMS on-state current 50 70 85 A I T(AV) ...

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SeekIC No. : 004419047 Detail

MDS35: Features: Symbol Value Unit I T(RMS) 50-70-85 A VDRM/VRRM 800 and 1200 V IGT 50 and 100 mAPinoutSpecifications Symbol Parameter Value U...

MDS35 Data Sheet

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Part Number:
MDS35
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

Symbol
Value
Unit
I T(RMS)
50-70-85
A
VDRM/VRRM
800 and 1200
V
IGT
50 and 100
mA



Pinout

Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
35
50
80
I T(RMS)
RMS on-state current
50
70
85
A
I T(AV)
Average on-state current
(Single phase-circuit, 180° conduction angle per device)
Tc=85°C
25
35
55
A
I TSM
I FSM
Non repetitive surge peak on-state
current (Tj initial = 25°C)
tp = 8.3 ms
Tj = 25°C
420
630
730
A
tp = 10 ms
400
600
700
I²t
I²t Value for fusing
tp = 10 ms
Tj = 25°C
800
1800
2450
A2S
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr £ 100 ns
F = 60 Hz
Tj = 125°C
50
A/s
IGM
Peak gate current
tp = 20 s
Tj = 125°C
4
A
P G(AV)
Average gate power dissipation
Tj = 125°C
1
W
Tstg
T j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
VRGM
Maximum peak reverse SCR gate voltage
5
V



Description

Packaged in ISOTOP modules, the MDS Series is based on the half-bridge SCR-diode configuration. MDS Series  are suitable for high power applications, using phase controlled bridges, such as soft-start circuits, welding equipment, motor speed controller. The compactness of the ISOTOP package allows high power density and optimized power bus connections. Thanks to their internal ceramic pad, they provide high voltage insulation (2500V RMS), complying with UL standards (File ref: E81734).




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