Features: • Maintains Stable Bias Current in Various Discrete Bipolar Junction and Field Effect Transistors• Provides Stable Bias Using a Single Component Without Use of Emitter Ballast and Bypass Components• Operates Over a Wide Range of Supply Voltages Down to 1.8 Vdc• Re...
MDC5000T1: Features: • Maintains Stable Bias Current in Various Discrete Bipolar Junction and Field Effect Transistors• Provides Stable Bias Using a Single Component Without Use of Emitter Ballast ...
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Rating |
Symbol |
Value |
Unit |
Power Supply Voltage |
VCC |
15 |
Vdc |
Ambient Operating Temperature Range |
TA |
40 to +85 |
°C |
Storage Temperature Range |
Tstg |
65 to +150 |
°C |
Junction Temperature |
TJ |
150 |
°C |
Collector Emitter Voltage (Q2) |
VCEO |
-15 |
V |
This MDC5000T1 provides a reference voltage and acts as a DC feedback element around an external discrete, NPN BJT or NChannel FET. It allows the external transistor to have its emitter/source directly grounded and still operate with a stable collector/drain DC current. It is primarily intended to stabilize the bias of discrete RF stages operating from a low voltage regulated supply, but can also be used to stabilize the bias current of any linear stage in order to eliminate emitter/source bypassing and achieve tighter bias regulation over temperature and unit variations. This device is intended to replace a circuit of three to six discrete components and is available in a SOT143 package.
The combination of low supply voltage, low quiescent current drain, and small package make MDC5000T1 ideal for portable communications applications such as:
• Cellular Telephones
• Pagers
• PCN/PCS Portables
• PCMCIA RF Modems
• Cordless Phones
• Broadband Transceivers and Other Portable Wireless Products