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MD56V62400/H

Features: • Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell• 4-bankx 4,194,304-wordx 4-bit configuration• 3.3 V power supply, ±0.3 V tolerance• Input : LVTTL compatible• Output : LVTTL compatible• Refresh : 4096 cycles/64 ms• Programmabl...

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SeekIC No. : 004418860 Detail

MD56V62400/H: Features: • Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell• 4-bankx 4,194,304-wordx 4-bit configuration• 3.3 V power supply, ±0.3 V tolerance• Input : LVT...

MD56V62400/H Data Sheet

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Part Number:
MD56V62400/H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
• 4-bank x 4,194,304-word x 4-bit configuration
• 3.3 V power supply, ±0.3 V tolerance
• Input : LVTTL compatible
• Output : LVTTL compatible
• Refresh : 4096 cycles/64 ms
• Programmable data transfer mode
 CAS latency (2, 3)
Burst length (2, 4, 8)
Data scramble (sequential, interleave)
• CBR auto-refresh, Self-refresh capability
• Package: 54-pin 400 mil plastic TSOP (Type II) (TSOPII54-P-400-0.80-K) (Product : MD56V62400/H-xxTA) xx indicates speed rank.




Pinout

Connection Diagram


Specifications

Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to VSS
VIN, VOUT
0.5 to VCC + 0.5
V
VCC Supply Voltage
VCC, VCCQ
0.5 to 4.6
V
Storage Temperature
Tstg
55 to 150
°C
Power Dissipation
PD*
1
W
Short Circuit Current
IOS
50
mA
Operating Temperature
Topr
0 to 70
°C



Description

The MD56V62400/H is a 4-bank x 4,194,304-word x 4-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.




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