Features: • Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell• 4-bank x 524,288-word x 32-bit configuration• 3.3 V power supply, ±0.3 V tolerance• Input : LVTTL compatible• Output : LVTTL compatible• Refresh : 4096 cycles/64 ms• Programmab...
MD56V62320: Features: • Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell• 4-bank x 524,288-word x 32-bit configuration• 3.3 V power supply, ±0.3 V tolerance• Input : LV...
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Parameter |
Symbol |
Rating |
Unit |
Voltage on Any Pin Relative to VSS |
VIN, VOUT |
0.5 to VCC + 0.5 |
V |
VCC Supply Voltage |
VCC, VCCQ |
0.5 to 4.6 |
V |
Storage Temperature |
Tstg |
55 to 150 |
°C |
Power Dissipation |
PD* |
1 |
W |
Short Circuit Current |
IOS |
50 |
mA |
Operating Temperature |
Topr |
0 to 70 |
°C |
The MD56V62320 is a 4-bank x 524,288-word x 32-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.