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MD56V62160E

Features: • Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell• 4-Bank × 1,048,576-word × 16-bit configuration• Single 3.3 V power supply, ±0.3 V tolerance• Input : LVTTL compatible• Output : LVTTL compatible• Refresh : 4096 cycles/64 ms• P...

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SeekIC No. : 004418858 Detail

MD56V62160E: Features: • Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell• 4-Bank × 1,048,576-word × 16-bit configuration• Single 3.3 V power supply, ±0.3 V tolerance• I...

MD56V62160E Data Sheet

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Part Number:
MD56V62160E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
• 4-Bank × 1,048,576-word × 16-bit configuration
• Single 3.3 V power supply, ±0.3 V tolerance
• Input : LVTTL compatible
• Output : LVTTL compatible
• Refresh : 4096 cycles/64 ms
• Programmable data transfer mode
   - CAS Latency (1, 2, 3)
   - Burst Length (1, 2, 4, 8, Full Page)
   - Data scramble (sequential, interleave)
• CBR auto-refresh, Self-refresh capability
• Packages:
   54-pin 400 mil plastic TSOP (TypeII) (TSOP(2)54-P-400-0.80-K)(Product: MD56V62160E-xxTA) xx indicates speed rank.


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Voltage on Any Pin Relative to VSS
VIN,VOUT
0.5 to VCC+ 0.5
V
VCC Supply Voltage
VCC,VCCQ
0.5 to 4.6
V
Storage Temperature
Tstg
55 to 150
Power Dissipation
PD*
1000
W
Short Circuit Output Current
IOS
50
mA
Operating Temperature
Topr
0 to 70
*: Ta = 25°C


Description

The MD56V62160E is a 4-Bank * 1,048,576-word * 16-bit Synchronous dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.




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