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MCTV35P60F1D

Features: • 35A, -600V• VTM = -1.35V (Max) at I = 35A and +150oC• 800A Surge Current Capability• 800A/ms di/dt Capability• MOS Insulated Gate Control• 50A Gate Turn-Off Capability at +150oC• Anti-Parallel DiodeSpecificationsPeak Off-State Voltage (See Figu...

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SeekIC No. : 004418797 Detail

MCTV35P60F1D: Features: • 35A, -600V• VTM = -1.35V (Max) at I = 35A and +150oC• 800A Surge Current Capability• 800A/ms di/dt Capability• MOS Insulated Gate Control• 50A Gate Tu...

MCTV35P60F1D Data Sheet

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Part Number:
MCTV35P60F1D
Supply Ability:
5000

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  • 1~5000
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Total Cost: $ 0.00

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Product Details

Description



Features:

• 35A, -600V
• VTM = -1.35V (Max) at I = 35A and +150oC
• 800A Surge Current Capability
• 800A/ms di/dt Capability
• MOS Insulated Gate Control
• 50A Gate Turn-Off Capability at +150oC
• Anti-Parallel Diode


Specifications

Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . .. .  . . . . . . . . . . . . . .  . . .  . . VDRM    -600      V
Continuous Cathode Current (See Figure 2)
TC = +25°C (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IK25    60        A
TC = +90°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IK115   35         A
Non-repetitive Peak Cathode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .. . . . . .. IKSM   800      A
Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . .  . IKC      50       A
Gate-Anode Voltage (Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGA1   ±20     V
Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .  . . . . .  VGAM    ±25     V
Rate of Change of Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dv/dt See Figure 11
Rate of Change of Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . di/dt 800 A/ms
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT    178      W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . . . . . . . . .          1.43   W/°C
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to +150 °C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL      260     °C
(0.063" (1.6mm) from case for 10s)

NOTE: 1. Maximum Pulse Width of 250ms (Half Sine) Assume TJ (Initial) = +90°C and TJ (Final) = TJ (Max) = +150°C


Description

The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate. MCTV35P60F1D is designed for use in motor controls, inverters, line switches and other power switching applications. The MCT is especially suited for resonant (zero voltage or zero current switching) applications. The SCR like forward drop greatly reduces conduction power loss.

MCTV35P60F1Ds allow the control of high power circuits with very small amounts of input energy. They feature the high peak current capability common to SCR type thyristors, and operate at junction temperatures up to +150oC with active switching. This MCTV35P60F1D features a discrete anti-parallel diode that shunts current around the MCT in the reverse direction without introducing carriers into the depletion region.




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