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MCTA75P60E1

Features: • 75A, -600V• VTM = -1.3V(Maximum) at I = 75A and +150oC• 2000A Surge Current Capability• 2000A/ms di/dt Capability• MOS Insulated Gate Control• 120A Gate Turn-Off Capability at +150oCSpecifications MCTV75P60E1MCTA75P60E1 NITS ...

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MCTA75P60E1: Features: • 75A, -600V• VTM = -1.3V(Maximum) at I = 75A and +150oC• 2000A Surge Current Capability• 2000A/ms di/dt Capability• MOS Insulated Gate Control• 120A Ga...

MCTA75P60E1 Data Sheet

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Part Number:
MCTA75P60E1
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

• 75A, -600V
• VTM = -1.3V(Maximum) at I = 75A and +150oC
• 2000A Surge Current Capability
• 2000A/ms di/dt Capability
• MOS Insulated Gate Control
• 120A Gate Turn-Off Capability at +150oC


Specifications
MCTV75P60E1
MCTA75P60E1
NITS
Peak Off-State Voltage (See Figure 11).
VDRM
-600
V
Peak Reverse Voltage .
VRRM
+5
V
Continuous Cathode Current (See Figure 2)
TC = +25o C (Package Limited)
IK25
85
A
TC = +90oC
IK90
75
A
Non-Repetitive Peak Cathode Current (Note 1)
IKSM
2000
A
Peak Controllable Current (See Figure 10)
IKC
120
A
Gate-Anode Voltage (Continuous)
VGA
±20
V
Gate-Anode Voltage (Peak)
VGAM
±25
V
Rate of Change of Voltage
dv/dt
See Figure 11
Rate of Change of Current
dI/dt
2000
A/ms
Maximum Power Dissipation
PT
208
W
Linear Derating Factor
1.67
W/o C
Operating and Storage Temperature
T J, TSTG
-55 to +150
o C
Maximum Lead Temperature for Soldering
(0.063" (1.6mm) from case for 10s)
TL
260
o C
1. Maximum Pulse Width of 250ms (Half Sine) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = +150oC


Description

The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate. MCTA75P60E1 is designed for use in motor controls, inverters, line switches and other power switching applications.


The MCTA75P60E1 is especially suited for resonant (zero voltage or zero current switching) applications. The SCR like forward drop greatly reduces conduction power loss.

MCTA75P60E1s allow the control of high power circuits with very small amounts of input energy. They feature the high peak current capability common to SCR type thyristors, and operate at junction temperatures up to +150oC with active switching.




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