MCT5210

Current Transfer Ratio :
Maximum Operating Temperature : + 100 C
Packaging : Bulk
Maximum Input Diode Current : 50 mA
Minimum Operating Temperature : - 55 C
Maximum Forward Diode Voltage : 1.5 V
Package / Case : PDIP-6
Maximum Reverse Diode Voltage : 6 V
Maximum Power Dissipation : 260 mW
Maximum Baud Rate : 150 KBps


Features:

• High CTR_CE(SAT) comparable to Darlingtons
• CTR guaranteed 0°C to 70°C
• High common mode transient rejection 5kV/s
• Data rates up to 150 kbits/s (NRZ)
• Underwriters Laboratory (UL) recognized (file #E90700)
• VDE recognized (file #94766) Add option 300 (e.g., MCT5211.300)


Application

• CMOS to CMOS/LSTTL logic isolation
• LSTTL to CMOS/LSTTL logic isolation
• RS-232 line receiver
• Telephone ring detector
• AC line voltage sensing
• Switching power supply


Description

The MCT5210 series consists of a high-efficiency AlGaAs, infrared emitting diode, coupled with an NPN phototransistor in a six pin dual-in-line package.

The MCT5210 is well suited for CMOS to LSTT/TTL interfaces, offering 250% CTR_CE(SAT) with 1 mA of LED input current. When an LED input current of 1.6 mA is supplied data rates to 20K bits/s are possible.

The MCT5210 can easily interface LSTTL to LSTTL/TTL, and with use of an external base to emitter resistor data rates of 100K bits/s can be achieved.