On-State RMS Current (It RMS)
:
Maximum Gate Peak Inverse Voltage
:
Mounting Style
: Through Hole
Packaging
: Tube
Off-State Leakage Current @ VDRM IDRM
: 0.01 mA
Rated Repetitive Off-State Voltage VDRM
: 800 V
Holding Current (Ih Max)
: 40 mA
Gate Trigger Current (Igt)
: 30 mA
Package / Case
: TO-220AB
Breakover Current IBO Max
: 300 A
Forward Voltage Drop
: 1.8 V at 50 A
Gate Trigger Voltage (Vgt)
: 1 V
Specifications
|
Parameter |
Symbol |
Value |
Unit |
|
Peak Repetitive OffState Voltage(1)
(TJ = 40 to 125°C, Sine Wave, 50 to
60 Hz, Gate Open) MCR25D
MCR25M
MCR25N |
VDRM
VRRM |
400
600
800 |
Volts |
|
On-State RMS Current
(180° Conduction Angles; TC = 80°C) |
ITM |
25 |
Amps |
|
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C) |
IT(RMS) |
300 |
Amps |
|
Circuit Fusing Consideration
(t = 8.3 ms) |
I2t |
373 |
Amps |
|
Forward Peak Gate Power
(Pulse Width 3 1.0 ms, TC = 80°C) |
PGM |
20 |
Amps |
|
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C) |
PG(AV) |
0.5 |
A2s |
|
Forward Peak Gate Current
(t 1.0 s, TC = 85°C) |
IGM |
2.0 |
Amps |
|
Operating Junction Temperature Range |
TJ |
40 to +125 |
°C |
|
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
MCR25N Data Sheet
