MCR25M

On-State RMS Current (It RMS) :
Maximum Gate Peak Inverse Voltage :
Rated Repetitive Off-State Voltage VDRM : 600 V
Mounting Style : Through Hole
Off-State Leakage Current @ VDRM IDRM : 0.01 mA
Holding Current (Ih Max) : 40 mA
Packaging : Tube
Gate Trigger Voltage (Vgt) : 1 V
Package / Case : TO-220AB
Gate Trigger Current (Igt) : 30 mA
Forward Voltage Drop : 1.8 V
Breakover Current IBO Max : 300 A


Specifications

Parameter	Symbol	Value	Unit
Peak Repetitive OffState Voltage(1) (TJ = 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR25D MCR25M MCR25N	VDRM VRRM	400 600 800	Volts
On-State RMS Current (180° Conduction Angles; TC = 80°C)	ITM	25	Amps
Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)	IT(RMS)	300	Amps
Circuit Fusing Consideration (t = 8.3 ms)	I2t	373	Amps
Forward Peak Gate Power (Pulse Width 3 1.0 ms, TC = 80°C)	PGM	20	Amps
Forward Average Gate Power (t = 8.3 ms, TC = 80°C)	PG(AV)	0.5	A2s
Forward Peak Gate Current (t 1.0 s, TC = 85°C)	IGM	2.0	Amps
Operating Junction Temperature Range	TJ	40 to +125	°C
Storage Temperature Range	Tstg	40 to +150	°C

(1) V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.