MCR225-10FP

Specifications

Parameter	Symbol	Value	Unit
Peak Repetitive OffState Voltage(1) (TJ = 40 to +125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR2258FP MCR22510FP	VDRM VRRM	600 800	Volts
On-State RMS Current (All Conduction Angles)	IT(RMS)	25	Amps
Peak Nonrepetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TC = +70°C)	ITSM	300	Amps
Circuit Fusing Consideration (t = 8.3 ms)	I2t	375	A2sec
Peak Gate Power (Pulse Width 1.0 s, TC = 80°C)	PGM	20	Watts
Forward Average Gate Power (TC = +70°C, t = 8.3 ms)	PG(AV)	0.5	Watts
Peak Gate Current (Pulse Width 3 1.0 ms, TC = 80°C)	IGM	2.0	Amps
RMS Isolation Voltage (TA = 25°C,                   Relative Humidity 20%)	V(ISO)	1500	Volts
Operating Junction Temperature Range	TJ	40 to +125	°C
Storage Temperature Range	Tstg	40 to +150	°C

(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Description

Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits MCR225-10FP.
• Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
• 300 A Surge Current Capability
• Insulated Package Simplifies Mounting
• Indicates UL Registered - File #E69369
• Device Marking: Logo, Device Type, e.g., MCR225-10FP, Date Code