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MCR218FP

Specifications Parameter Symbol Value Unit Peak Repetitive Forward and Reverse Blocking Voltage(1)(TJ = 40 to +125°C, Gate Open)MCR218-2FPMCR218-4FPMCR218-6FPMCR218-8FPMCR218-10FP VDRMVRRM 50200400600800 Volts On-State RMS Current (TC = +70°C) Full Cycle Sine Wav...

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MCR218FP: Specifications Parameter Symbol Value Unit Peak Repetitive Forward and Reverse Blocking Voltage(1)(TJ = 40 to +125°C, Gate Open)MCR218-2FPMCR218-4FPMCR218-6FPMCR218-8FPMCR218-10...

MCR218FP Data Sheet

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Part Number:
MCR218FP
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
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Product Details

Description



Specifications

Parameter
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = 40 to +125°C, Gate Open)
MCR218-2FP
MCR218-4FP
MCR218-6FP
MCR218-8FP
MCR218-10FP
VDRM
VRRM
50
200
400
600
800
Volts
On-State RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz(2)
IT(RMS)
8
A
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C)
Preceded and followed by rated current
ITSM
80
A
Circuit Fusing Considerations (t = 8.3 ms)
I2t
26
A2sec
Peak Gate Power (TC = +70°C, Pulse Width = 10 s)
PGM
5
Watts
Average Gate Power, TA = 25°C
PG(AV)
0.5
Watts
Peak Forward Gate Current, TA = 25°C
(300 s, 120 PPS)
IGM
2
A
             RMS Isolation Voltage (TA = 25°C,                    Relative  Humidity 20%)        VRGM        1500       Volts
Operating Junction Temperature Range @ Rated VRRM and VDRM
TJ
40 to +125
°C
Storage Temperature Range
Tstg
40 to +125
°C

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.




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