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MCR218-10FP

Specifications Rating Symbol Value Unit Peak Repetitive OffState Voltage(1)(TJ = 40 to +125°C, Sine Wave 50 to60 Hz, Gate Open)MCR2186FPMCR21810FP VDRM,VRRM 400800 Volts On-State RMS Current (TC = +70°C)(2)(180° Conduction Angles) IT(RMS) 8.0 Amps Peak Nonrepetitive Surge Cu...

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MCR218-10FP: Specifications Rating Symbol Value Unit Peak Repetitive OffState Voltage(1)(TJ = 40 to +125°C, Sine Wave 50 to60 Hz, Gate Open)MCR2186FPMCR21810FP VDRM,VRRM 400800 Volts On-State RM...

MCR218-10FP Data Sheet

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Part Number:
MCR218-10FP
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Product Details

Description



Specifications

Rating Symbol Value Unit
Peak Repetitive OffState Voltage(1)
(TJ = 40 to +125°C, Sine Wave 50 to
60 Hz, Gate Open)
MCR2186FP
MCR21810FP		 VDRM,
VRRM		 400
800		 Volts
On-State RMS Current (TC = +70°C)(2)
(180° Conduction Angles)		 IT(RMS) 8.0 Amps
Peak Nonrepetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)		 ITSM 100 Amps
Circuit Fusing (t = 8.3 ms) I2t 26 A2s
Forward Peak Gate Power
(TC = +70°C, Pulse Width  1.0 ms)		 PGM 5.0 Watts
Forward Average Gate Power
(TC = +70°C, t = 8.3 ms)		 PG(AV) 0.5 Watt
Forward Peak Gate Current
(TC = +70°C, Pulse Width  1.0 ms)		 IGM 2.0 Amps
RMS Isolation Voltage (TA = 25°C,
Relative Humidity  20%) ( )		 V(ISO) 1500 Volts
Operating Junction Temperature TJ 40 to
+125		 °C
Storage Temperature Range Tstg 40 to
+150		 °C



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