MCR12N

On-State RMS Current (It RMS) :
Maximum Gate Peak Inverse Voltage :
Off-State Leakage Current @ VDRM IDRM : 0.01 mA
Gate Trigger Current (Igt) : 20 mA
Holding Current (Ih Max) : 40 mA
Packaging : Tube
Breakover Current IBO Max : 100 A
Gate Trigger Voltage (Vgt) : 1 V
Package / Case : TO-220AB
Rated Repetitive Off-State Voltage VDRM : 800 V
Mounting Style : SMD/SMT
Forward Voltage Drop : 2.2 V at 24 A


Specifications

Parameter	Symbol	Value	Unit
Peak Repetitive OffState Voltage(1) (TJ = 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR12D MCR12M MCR12N	VDRM VRRM	400 600 800	Volts
On-State RMS Current (180° Conduction Angles; TC = 80°C)	IT(RMS)	12	A
Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)	ITSM	100	A
Circuit Fusing Consideration (t = 8.33 ms)	I2t	41	A2sec
Forward Peak Gate Power (Pulse Width 1.0 s, TC = 80°C)	PGM	5.0	Watts
Forward Average Gate Power (t = 8.3 ms, TC = 80°C)	PG(AV)	0.5	Watts
Forward Peak Gate Current (Pulse Width 1.0 s, TC = 80°C)	IGM	2.0	A
Operating Junction Temperature Range	TJ	40 to +125	°C
Storage Temperature Range	Tstg	40 to +150	°C

1. V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are xceeded.