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MCR12LM

SCRs 600V 12A

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SeekIC No. : 00696953 Detail

MCR12LM: SCRs 600V 12A

MCR12LM Data Sheet

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Part Number:
MCR12LM
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Breakover Current IBO Max : 100 A Rated Repetitive Off-State Voltage VDRM : 600 V
Off-State Leakage Current @ VDRM IDRM : 0.01 mA Forward Voltage Drop : 2.2 V at 24 A
Gate Trigger Voltage (Vgt) : 0.8 V Gate Trigger Current (Igt) : 8 mA
Holding Current (Ih Max) : 20 mA Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

On-State RMS Current (It RMS) :
Maximum Gate Peak Inverse Voltage :
Rated Repetitive Off-State Voltage VDRM : 600 V
Gate Trigger Voltage (Vgt) : 0.8 V
Mounting Style : Through Hole
Off-State Leakage Current @ VDRM IDRM : 0.01 mA
Packaging : Tube
Breakover Current IBO Max : 100 A
Package / Case : TO-220AB
Holding Current (Ih Max) : 20 mA
Forward Voltage Drop : 2.2 V at 24 A
Gate Trigger Current (Igt) : 8 mA


Specifications

Rating Symbol Value Unit
Peak Repetitive OffState Voltage(1)
(TJ = 40 to 125°C, Sine Wave, 50 to
60 Hz, Gate Open) MCR12LD
MCR12LM
MCR12LN		 VDRM,
VRRM
400
600
800		 Volts
On-State RMS Current
(180° Conduction Angles; TC = 80°C)		 IT(RMS) 12 A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)		 ITSM 100 A
Circuit Fusing (t = 8.3 ms) I2t 41 A2sec
Forward Average Gate Power
(TC = +70°C, t = 8.3 ms)		 PGM 5.0 Watts
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)		 PG(AV) 0.5 Amps
Forward Peak Gate Current
(Pulse Width 3 1.0 ms, TC = 80°C)		 IGM 2.0 Volts
Operating Junction Temperature TJ 40 to
+125		 °C
Storage Temperature Range Tstg 40 to
+150		 °C



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