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MCR12DSN

Specifications Parameter Symbol Value Unit Peak Repetitive OffState Voltage (1)Peak Repetitive Reverse Voltage(TJ = 40 to 110°C, RGK = 1.0 K) MCR12DSM MCR12DSN VDRMVRRM 600800 Volts OnState RMS Current(All Conduction Angles; TC = 75°C) IT(RMS) 12 Amps ...

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MCR12DSN: Specifications Parameter Symbol Value Unit Peak Repetitive OffState Voltage (1)Peak Repetitive Reverse Voltage(TJ = 40 to 110°C, RGK = 1.0 K) MCR12DSM MCR12DSN VDRMVRRM 60...

MCR12DSN Data Sheet

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Part Number:
MCR12DSN
Supply Ability:
5000

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Specifications

Parameter
Symbol
Value
Unit
Peak Repetitive OffState Voltage (1)
Peak Repetitive Reverse Voltage
(TJ = 40 to 110°C, RGK = 1.0 K) MCR12DSM
                                                        MCR12DSN
VDRM
VRRM
600
800
Volts
OnState RMS Current
(All Conduction Angles; TC = 75°C)
IT(RMS)
12
Amps
Average OnState Current (All Conduction Angles; TC = 75°C)
IT(AV)
7.6
Amps
Peak NonRepetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 110°C)
ITSM
100
Amps
Circuit Fusing Consideration (t = 8.3 msec)
I2t
41
A2sec
Peak Gate Power
(Pulse Width 10 sec, TC = 75°C)
PGM
5.0
Watts
Average Gate Power
(t = 8.3 msec, TC = 75°C)
PG(AV)
0.5
Watts
 Peak Gate Current (Pulse Width   10 sec, TC = 75°C)         IGM           2.0        Amps
Operating Junction Temperature Range
TJ
40 to +110
°C
Storage Temperature Range
Tstg
40 to +150
°C

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are xceeded.




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