Features: `Sensitive Gate Allows Triggering by Micro controllers and Other Logic circuits`Blocking Voltage to 600V`On-State Current Rating of 0.8A RMS at 80°C`High Surge Current Capability 10A`Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design`Immunity to dV/dt 20V/sec Mi...
MCR101: Features: `Sensitive Gate Allows Triggering by Micro controllers and Other Logic circuits`Blocking Voltage to 600V`On-State Current Rating of 0.8A RMS at 80°C`High Surge Current Capability 10A`Mini...
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Parameter |
Symbol |
Value |
Unit |
Peak Repetitive Off-State Voltage(note) (TJ=-40 to 110°C, Sine Wave, 50 to 60Hz; Gate Open) MCR101-4 MCR101-6 MCR101-8 |
VDRM VRRM |
200 400 600 |
Volts |
On-Sate RMS Current (Tc=80°C) 180° Condition Angles |
IT(RMS) |
0.8 |
A |
Peak Non-Repetitive Surge Current (1/2 cycle, Sine Wave, 60Hz, TJ=25°C) |
ITSM |
10 |
A |
Circuit Fusing Considerations (t=8.3 ms) |
I2t |
0.415 |
A2s |
Forward Peak Gate Power (TA=25°C, Pulse Width 1.0s) |
PGM |
0.1 |
Watts |
Forward Average Gate Power (TA=25°C, t=8.3ms) |
PG(AV) |
0.1 |
Watts |
Peak Gate Current (Pulse Width 3 1.0 ms, TC = 80°C) |
IGM |
1 |
A |
Peak Gate Voltage Reverse (TA=25°C, Pulse Width1.0s) |
VGRM | 5 | V |
Operating Junction Temperature Range |
TJ |
40 to +110 |
°C |
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
Note: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode.
Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
PNPN MCR101 devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-92 package which is readily adaptable for use in automatic insertion equipment.