Features: • Single 3.3 V + 10%, 5% Power Supply• Plug and Pin Compatibility with 2MB and 4MB• Multiple Clock Pins for Reduced Loading• All Inputs and Outputs are LVTTL Compatible• Byte Write Capability• Fast SRAM Access Times: 8/9/12 ns• Decoupling Capaci...
MCM72F9: Features: • Single 3.3 V + 10%, 5% Power Supply• Plug and Pin Compatibility with 2MB and 4MB• Multiple Clock Pins for Reduced Loading• All Inputs and Outputs are LVTTL Compa...
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Rating | Symbol | Value | Unit |
Power Supply Voltage | VDD | 0.5 to + 4.6 | V |
Voltage Relative to VSS (See Note 2) | Vin, Vout | 0.5 to VDD + 0.5 | V |
Input Voltage Three State I/O (See Note 2) | VIT | 0.5 to VDD + 0.5 | V |
Output Current (per I/O) | Iout | ± 20 | mA |
Power Dissipation MCM72F8 MCM72F9 |
PD | 4.6 9.2 |
W |
Ambient Temperature | TA | 0 to 70 | |
Die Temperature | TJ | 110 | |
Temperature Under Bias | Tbias | 10 to + 85 | |
Storage Temperature | Tstg | 55 to + 125 |
The MCM72F8 (2MB) is configured as 256K x 72 bits and the MCM72F9 (4MB) is configured as 512K x 72 bits. Both are packaged in a 168pin dualinline memory module DIMM. Each module uses Motorola's 3.3 V 256K x 18 bit flowthrough BurstRAMs.
Address (A), data inputs (DQ, DP) of the MCM72F9, and all control signals except output enable (G) are clock (K) controlled through positiveedgetriggered noninverting registers.
Write cycles of the MCM72F9 are internally selftimed and initiated by the rising edge of the clock (K) input. This feature provides increased timing flexibility for incoming signals. Synchronous byte write (W) allows writes to either individual bytes or to both bytes.