Features: • Single 3.3 V + 10%, 5% Power Supply• Plug and Pin Compatibility with 1MB, 2MB, and 4MB• Multiple Clock Pins for Reduced Loading• All Inputs and Outputs are LVTTL Compatible• Byte Write Capability• Fast SRAM Access Times: 8/9/12 ns• High Qualit...
MCM72F10DGB: Features: • Single 3.3 V + 10%, 5% Power Supply• Plug and Pin Compatibility with 1MB, 2MB, and 4MB• Multiple Clock Pins for Reduced Loading• All Inputs and Outputs are LVTTL...
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Rating | Symbol | Value | Unit |
Power Supply Voltage | VDD | 0.5 to + 4.6 | V |
Voltage Relative to VSS (See Note 2) |
Vin, Vout | 0.5 to VDD + 0.5 | V |
Input Voltage Three State I/O (See Note 2) |
VIT | VSS 0.5 to VDD + 0.5 | V |
Output Current (per I/O) | Iout | ± 20 | mA |
Power Dissipation | PD | 4.6 | W |
Temperature Under Bias | Tbias | 10 to + 85 | °C |
Storage Temperature | Tstg | 55 to + 125 | °C |
Address (A), data inputs (DQ, DP) of the MCM72F10DGB, and all control signals except output enable (G ) are clock (K) controlled through positiveedgetriggered noninverting
registers.
Write cycles of the MCM72F10DGB are internally selftimed and initiated by the rising edge of the clock (K) input. This feature provides increased timing flexibility for incoming signals. Synchronous byte write (W ) allows writes to either individual bytes or to both bytes.