Features: ·Low ON resistance.·Ultrahigh-speed swithcing.·2.5V drive.·Composite type with 2 MOSFETs contained in one package, facilitating high-density mounting.Specifications Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS...
MCH6602: Features: ·Low ON resistance.·Ultrahigh-speed swithcing.·2.5V drive.·Composite type with 2 MOSFETs contained in one package, facilitating high-density mounting.Specifications Parameter Symbol ...
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Parameter | Symbol | Conditions | Ratings | Unit |
Drain-to-Source Voltage | VDSS | 30 | V | |
Gate-to-Source Voltage | VGSS | ±10 | V | |
Drain Current (DC) | ID | 0.35 | A | |
Drain Current (Pulse) | IDP |
PW10s, duty cycle1% | 1.4 | A |
Allowable Power Dissipation | PD | Mounted on a ceramic board (900mm2*0.8mm)1unit | 0.8 | W |
Channel Temperature | Tch | 150 | ||
Storage Temperature | Tstg | -55 to +150 |