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MCH5818

Features: • Composite type with a P-Channel Sillicon MOSFET (MCH3339) and a Schottky Barrier Diode (SBS007M) contained in one package facilitating high-density mounting.[MOSFET]• Low ON-resistance.• Ultrahigh-speed switching.[SBD]• Short reverse recovery time.• Low fo...

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SeekIC No. : 004417647 Detail

MCH5818: Features: • Composite type with a P-Channel Sillicon MOSFET (MCH3339) and a Schottky Barrier Diode (SBS007M) contained in one package facilitating high-density mounting.[MOSFET]• Low ON-...

MCH5818 Data Sheet

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Part Number:
MCH5818
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• Composite type with a P-Channel Sillicon MOSFET (MCH3339) and a Schottky Barrier Diode (SBS007M) contained in one package facilitating high-density mounting.
[MOSFET]
• Low ON-resistance.
• Ultrahigh-speed switching.
[SBD]
• Short reverse recovery time.
• Low forward voltage.




Pinout

Connection Diagram




Specifications

Absolute maximum ratings
VDSS [V] 12
ID [A] 1.5
PD [W] 0.8
When mounted on ceramic substrate (900mm²*0.8mm) 1unit
VRRM [V] 15
IO [A] 0.5
Electrical characteristics
VGS(off) min to max [V] 1.0 to 2.4
|yfs| typ [S] 1.4
RDS(on)1 typ [] 0.2
RDS(on)1 max [] 0.27
VGS [V] 10
ID [A] 0.8
RDS(on)2 typ [] 0.37
RDS(on)2 max [] 0.53
VGS [V] 4
ID [A] 0.1
Ciss [pF] 145
VF max [V] 0.46
IF [A] 0.5
IR [µA] 200
VR [V] 6
trr max [ns] 10
IF=IR [mA] 100
Operation frequency [kHz] 2000





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