MCH5804

Features: • Composite type with an N-Channel Sillicon MOSFET(MCH3408) and a Schottky Barrier Diode (SBS007M)contained in one package facilitating high-densitymounting.[MOSFET]• Low ON-resistance.• Ultrahigh-speed switching.• 4V drive.[SBD]• Short reverse recovery time...

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SeekIC No. : 004417640 Detail

MCH5804: Features: • Composite type with an N-Channel Sillicon MOSFET(MCH3408) and a Schottky Barrier Diode (SBS007M)contained in one package facilitating high-densitymounting.[MOSFET]• Low ON-re...

floor Price/Ceiling Price

Part Number:
MCH5804
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• Composite type with an N-Channel Sillicon MOSFET
(MCH3408) and a Schottky Barrier Diode (SBS007M)
contained in one package facilitating high-density
mounting.
[MOSFET]
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
[SBD]
• Short reverse recovery time.
• Low forward voltage.





Specifications

Parameter Symbol Conditions Ratings Unit
[MOSFET]
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID 1.4 A
Drain Current (Pulse) IDP PW10ms, duty cycle1% 5.6 A
Allowable Power Dissipation PD Mounted on a ceramic board (600mm250.8mm) 1unit 0.8 W
Channel Temperature Tch 150
Storage Temperature Tstg --55 to +125
[SBD]
Repetitive Peak Reverse Voltage VRRM 15 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 15 V
Average Output Current IO 0.5 A
Surge Forward Current IFSM 50Hz sine wave, 1 cycle 10 A
Junction Temperature Tj --55 to +125
Storage Temperature Tstg --55 to +125





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