Features: • Composite type with an N-Channel Sillicon MOSFET(MCH3408) and a Schottky Barrier Diode (SBS007M)contained in one package facilitating high-densitymounting.[MOSFET]• Low ON-resistance.• Ultrahigh-speed switching.• 4V drive.[SBD]• Short reverse recovery time...
MCH5804: Features: • Composite type with an N-Channel Sillicon MOSFET(MCH3408) and a Schottky Barrier Diode (SBS007M)contained in one package facilitating high-densitymounting.[MOSFET]• Low ON-re...
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Parameter | Symbol | Conditions | Ratings | Unit |
[MOSFET] | ||||
Drain-to-Source Voltage | VDSS | 30 | V | |
Gate-to-Source Voltage | VGSS | ±20 | V | |
Drain Current (DC) | ID | 1.4 | A | |
Drain Current (Pulse) | IDP | PW10ms, duty cycle1% | 5.6 | A |
Allowable Power Dissipation | PD | Mounted on a ceramic board (600mm250.8mm) 1unit | 0.8 | W |
Channel Temperature | Tch | 150 | ||
Storage Temperature | Tstg | --55 to +125 | ||
[SBD] | ||||
Repetitive Peak Reverse Voltage | VRRM | 15 | V | |
Nonrepetitive Peak Reverse Surge Voltage | VRSM | 15 | V | |
Average Output Current | IO | 0.5 | A | |
Surge Forward Current | IFSM | 50Hz sine wave, 1 cycle | 10 | A |
Junction Temperature | Tj | --55 to +125 | ||
Storage Temperature | Tstg | --55 to +125 |