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MCH5803

Features: • Composite type with an N-Channel Sillicon MOSFET (MCH3408) and a Schottky Barrier Diode (SBS006M) contained in one package facilitating high-density mounting. [MOSFET]• Low ON-resistance.• Ultrahigh-speed switching.• 4V drive. [SBD]• Short reverse recovery...

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SeekIC No. : 004417639 Detail

MCH5803: Features: • Composite type with an N-Channel Sillicon MOSFET (MCH3408) and a Schottky Barrier Diode (SBS006M) contained in one package facilitating high-density mounting. [MOSFET]• Low O...

MCH5803 Data Sheet

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Part Number:
MCH5803
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• Composite type with an N-Channel Sillicon MOSFET
   (MCH3408) and a Schottky Barrier Diode (SBS006M)
   contained in one package facilitating high-density
   mounting.
   [MOSFET]
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
   [SBD]
• Short reverse recovery time.
• Low forward voltage.


Specifications

Parameter Symbol Conditions Ratings Unit
[MOSFET]
Drain-to-Source Voltage VDSS   30 V
Gate-to-Source Voltage VGSS   ±20 V
Drain Current (DC) ID   1.4 A
Drain Current (Pulse) IDP PW10ms, duty cycle1% 5.6 A
Allowable Power Dissipation PD Mounted on a ceramic board (900mm250.8mm) 1unit 0.8 W
Channel Temperature Tch   150
Storage Temperature Tstg   --55 to +125
[SBD]
Repetitive Peak Reverse Voltage VRRM   30 V
Nonrepetitive Peak Reverse Surge Voltage VRSM   30 V
Average Output Current IO   0.5 A
Surge Forward Current IFSM 50Hz sine wave, 1 cycle 10 A
Junction Temperature Tj   --55 to +125
Storage Temperature Tstg   --55 to +125



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