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MCH5801

Features: • Composite type with an N-Channel Sillicon MOSFET(MCH3405) and a Schottky Barrier Diode (SBS007M)contained in one package facilitating high-densitymounting.[MOSFET]• Low ON-resistance.• Ultrahigh-speed switching.• 1.8V drive.[SBD]• Short reverse recovery ti...

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SeekIC No. : 004417637 Detail

MCH5801: Features: • Composite type with an N-Channel Sillicon MOSFET(MCH3405) and a Schottky Barrier Diode (SBS007M)contained in one package facilitating high-densitymounting.[MOSFET]• Low ON-re...

MCH5801 Data Sheet

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Part Number:
MCH5801
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Composite type with an N-Channel Sillicon MOSFET
(MCH3405) and a Schottky Barrier Diode (SBS007M)
contained in one package facilitating high-density
mounting.
[MOSFET]
• Low ON-resistance.
• Ultrahigh-speed switching.
• 1.8V drive.
[SBD]
• Short reverse recovery time.
• Low forward voltage.






Pinout

<img src="/uploadfile/ic-mfg/418/MCPH5.gif">





Specifications

Parameter Symbol

Conditions

 Ratings Unit
[MOSFET]
Drain-to-Source Voltage VDSS 20 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current (DC) ID 1.5 A
Drain Current (Pulse) IDP PW10ms, duty cycle1% 6 A
Allowable Power Dissipation PD Mounted on a ceramic board (900mm250.8mm) 1unit 0.8 W
Channel Temperature Tch 150
Storage Temperature Tstg --55 to +125
[SBD]
Repetitive Peak Reverse Voltage VRRM 15 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 15 V
Average Output Current IO 0.5 A
Surge Forward Current IFSM 50Hz sine wave, 1 cycle 10 A
Junction Temperature Tj --55 to +125
Storage Temperature Tstg --55 to +125


Absolute maximum ratings
VDSS [V] 20
ID [A] 1.5
PD [W] 0.8
When mounted on ceramic substrate (900mm²*0.8mm) 1unit
VRRM [V] 15
IO [A] 0.5
Electrical characteristics
VGS(off) min to max [V] 0.4 to 1.3
|yfs| typ [S] 2.8
RDS(on)1 typ [] 0.2
RDS(on)1 max [] 0.28
VGS [V] 2.5
ID [A] 0.5
RDS(on)2 typ [] 0.28
RDS(on)2 max [] 0.39
VGS [V] 1.8
ID [A] 0.1
Ciss [pF] 100
VF max [V] 0.45
IF [A] 0.5
IR [µA] 200
VR [V] 6
trr max [ns] 10
IF=IR [mA] 100
Operation frequency [kHz] 1500





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