Features: • Adoption of MBIT processes.• High current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.• Ultrasmall package facilitates miniaturization in end products (0.85mm).• High allowable power dissipationApplication• ...
MCH3209: Features: • Adoption of MBIT processes.• High current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.• Ultrasmall package facilitates ...
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Absolute maximum ratings | |
---|---|
VCEO [V] | 30 |
IC [A] | 3 |
PC [W] | 0.8
When mounted on ceramic substrate (600mm²×0.8mm) |
Electrical characteristics | |
---|---|
hFE min | 200 |
hFE max | 560 |
VCE [V] | 2 |
IC [A] | 0.5 |
VCE (sat) typ [V] | 0.12 |
VCE (sat) max [V] | 0.18 |
IC [A] | 1.5 |
IB [mA] | 30 |
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Base Voltage |
VCBO |
(-30)40 |
V | |
Collector-to-Emitter Voltage |
VCEO |
(-30) |
V | |
Emitter-to-Base Voltage |
VEBO |
(-)5 |
V | |
Collector Current |
IC |
(-)3 |
A | |
Collector Current(Pulse) |
ICP |
(-)5 |
A | |
Base Current |
IB |
(-)600 |
mA | |
Collector Dissipation |
PC |
Mounted on a ceramic board (600mm2X0.8mm) |
0.8 |
W |
Junction Temperature |
Tj |
150 |
°C | |
Storage Temperature |
Tstg |
-55 to +150 |
°C |