Features: • Adoption of MBIT processes.• Large current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.• Ultrasmall package facilicates miniaturization in end products (mounting height : 0.85mm).• High allowable power dissipation...
MCH3106: Features: • Adoption of MBIT processes.• Large current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.• Ultrasmall package facilicates...
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Absolute maximum ratings | |
---|---|
VCEO [V] | 12 |
IC [A] | 3 |
PC [W] | 0.9
When mounted on ceramic substrate (600mm²×0.8mm) |
Electrical characteristics | |
---|---|
hFE min | 200 |
hFE max | 560 |
VCE [V] | 2 |
IC [A] | 0.5 |
VCE (sat) typ [V] | 0.11 |
VCE (sat) max [V] | 0.165 |
IC [A] | 1.5 |
IB [mA] | 30 |
PARAMETER | Symbol | Conditions | Ratings | UNIT |
Collector-to-Base Voltage |
VCBO | -15 | V | |
Collector-to-Emitter Voltage |
VCEO | -12 | V | |
Emitter-to-Base Voltage |
VEBO | -5 | V | |
Collector Current |
IC | -3 | A | |
Collector Current (Pulse) |
ICP | -5 | A | |
Collector Current (Pulse) |
IB | -600 | mA | |
Collector Dissipation | PC | Mounted on a ceramic board(600mm250.8mm) | 0.9 | W |
Junction Temperature | Tj | 150 | °C | |
Storage Temperature | Tstg | -55 to +150 | °C |