Features: • High Speed: tPD = 3.5 ns (Typ) at VCC = 5 V• Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C• TTLCompatible Inputs: VIL = 0.8 V; VIH = 2.0 V• CMOSCompatible Outputs: VOH > 0.8 VCC; VOL < 0.1 VCC @Load• Power Down Protection Provided on Inputs an...
MC74VHC1GT32: Features: • High Speed: tPD = 3.5 ns (Typ) at VCC = 5 V• Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C• TTLCompatible Inputs: VIL = 0.8 V; VIH = 2.0 V• CMOSCompatible ...
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Features: Operating range: 38 to 47 Gb/s (min.) (note)Signal regeneration with full-rate clock sig...
Symbol |
Characteristics |
Value |
Unit |
VCC | DC Supply Voltage |
0.5 to +7.0 |
V |
VIN | DC Input Voltage |
0.5 to + 7.0 |
V |
VOUT | DC Output Voltage VCC = 0 High or Low State |
0.5 to + 7.0 0.5 to VCC + 0.5 |
V |
IIK | Input Diode Current |
-20
|
mA
|
IOK | Output Diode Current VOUT < GND; VOUT > VCC |
+20 |
mA |
IOUT | DC Output Current, per Pin |
+25 |
mA |
ICC | DC Supply Current, VCC and GND |
+50 |
mA |
PD | Power dissipation in still air SC88A, TSOP5 |
200 |
mW |
JA |
Thermal resistance SC88A, TSOP5 |
333 |
°C/W |
TL | Lead temperature, 1 mm from case for 10 s |
260 |
°C |
TJ | Junction temperature under bias |
+150 |
°C |
Tstg | Storage Temperature |
65 to +150 |
°C |
VESD | ESD Withstand Voltage Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) |
> 2000 > 200 N/A |
V |
ILatch-UP | LatchUp Performance Above VCC and Below GND at 125°C (Note 5) |
±500 |
mA |