MC74VHC1G50

Features:

• High Speed: tPD = 3.5ns (Typ) at VCC = 5V
• Low Power Dissipation: ICC = 2mA (Max) at TA = 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Latchup Performance Exceeds 300mA
• ESD Performance: HBM > 1500V; MM > 200V


Pinout




Specifications

Characteristics	Symbol	Value	Unit
DC Supply Voltage	VCC	0.5 to +7.0	V
DC Input Voltage	VIN	0.5 to VCC +0.5	V
DC Output Voltage VCC = 0 High or Low State	VOUT	0.5 to 7.0 0.5 to VCC + 0.5	V
Digital Input Diode Current	IIK	20	mA
DC Supply Current, VCC and GND	ICC	+25	mA
Power dissipation in still air, SC88A †	PD	200	mW
Lead temperature, 1 mm from case for 10 s	TL	260	°C
Storage temperature	Tstg	65 to +150	°C
Output Diode Current (VOUT < GND; VOUT > VCC)	IOK	+20	mA
DC Output Current, per Pin	IOUT	+25	mA

Description

The MC74VHC1G50 is an advanced high speed CMOS buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

The internal circuit of MC74VHC1G50 is composed of three stages, including a buffered output which provides high noise immunity and stable output.