MC74VHC1G07

Features: • High Speed: tPD = 3.8ns (Typ) at VCC = 5V• Low Internal Power Dissipation: ICC = 2A (Max) at TA = 25°C• Power Down Protection Provided on Inputs• Pin and Function Compatible with Other Standard Logic Families• Latchup Performance Exceeds 300mA• ESD P...

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MC74VHC1G07 Picture
SeekIC No. : 004417181 Detail

MC74VHC1G07: Features: • High Speed: tPD = 3.8ns (Typ) at VCC = 5V• Low Internal Power Dissipation: ICC = 2A (Max) at TA = 25°C• Power Down Protection Provided on Inputs• Pin and Function...

floor Price/Ceiling Price

Part Number:
MC74VHC1G07
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• High Speed: tPD = 3.8ns (Typ) at VCC = 5V
• Low Internal Power Dissipation: ICC = 2A (Max) at TA = 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible with Other Standard Logic Families
• Latchup Performance Exceeds 300mA
• ESD Performance: HBM > 2000V; MM > 200V, CDM > 1500V



Pinout

  Connection Diagram


Specifications

Characteristics Symbol Value Unit
DC Supply Voltage VCC 0.5 to +7.0 V
DC Input Voltage VIN 0.5 to +7.0 V
DC Output Voltage VOUT 0.5 to 7.0 V
Input Diode Current IIK 20 mA
Output Diode Current (VOUT< GND; VOUT> VCC) IOK +20 mA
DC Output Current, per Pin IOUT +25 mA
DC Supply Current, VCCand GND ICC +50 mA
Power dissipation in still air, SC88A † PD 200 mW
Lead temperature, 1 mm from case for 10 s TL 260 °C
Storage temperature Tstg 65 to +150 °C
* Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolutemaximumrated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions.
†Derating - SC88A Package: 3 mW/°C from 65°C to 125°C



Description

The MC74VHC1G07 is an advanced high speed CMOS buffer with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

The internal circuit is composed of three stages, including a buffer and an open drain output which provides the capability to set the output switching level. This allows the MC74VHC1G07 to be used to interface 5V circuits to circuits of any voltage between VCC and 7V using an external resistor and power supply.

The MC74VHC1G07 input structure provides protection when voltages up to 7V are applied, regardless of the supply voltage.


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