MC74VHC1G04

Features:

• High Speed: t _PD = 3.5 ns (Typ) at V _CC = 5 V
• Low Power Dissipation: I _CC = 2 mA (Max) at T _A = 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 105; Equivalent Gates = 26


Pinout




Specifications

Symbol	Parameter	Value	Unit
VCC	DC Supply Voltage	0.5 to + 7.0	V
VIN	DC Input Voltage	0.5 to 7.0	V
VOUT	DC Output Voltage............. ............. ............. ............. ............. ........... VCC =0 ............. ............. ............. ............. ............. ............. ...........High or Low State	0.5 to 7.0 0.5 to Vcc + 0.5	V
IIK	Input Diode Current	20	mA
IOK	Output Diode Current ............. ............. ............. ........VOUT < GND;VOUT > VCC	+20	mA
IOUT	DC Output Current, per Pin	+ 25	mA
ICC	DC Supply Current, VCC and GND	+50	mA
PD	Power dissipation in still air         ............. ............. ............. SC88A, TSOP5	200	mW
JA	Thermal resistance ...... ............. ............. ............. ............. SC88A, TSOP5	333	°C/W
TL	Lead Temperature, 1 mm from Case for 10 s	260	°C
TJ	Junction Temperature Under Bias	+ 150	°C
Tstg	Storage temperature	65 to +150	°C
VESD	ESD Withstand Voltage............. ............. .............  Human Body Model (Note 2)   ............. ............. ............. ............. ............. ............. Machine Model (Note 3)     ............. ............. ............. ............. ............. Charged Device Model (Note 4)	>2000 > 200 N/A	V
ILATCHUP	LatchUp Performance............. Above VCC and Below GND at 125°C (Note 5)	± 500	mA

1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolutemaximumrated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22A114A
3. Tested to EIA/JESD22A115A
4. Tested to JESD22C101A
5. Tested to EIA/JESD78


Description

The MC74VHC1G04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.

The MC74VHC1G04 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1G04 to be used to interface 5 V circuits to 3 V circuits.