MC74VHC1G03

Features:

• High Speed: t_PD = 3.6ns (Typ) at V_CC = 5V
• Low Internal Power Dissipation: I_CC = 2A (Max) at T_A = 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible with Other Standard Logic Families
• Latchup Performance Exceeds 300mA
• ESD Performance: HBM > 2000V; MM > 200V, CDM > 1500V


Pinout




Specifications

Characteristics	Symbol	Value	Unit
DC Supply Voltage	VCC	0.5 to +7.0	V
DC Input Voltage	VIN	0.5 to +7.0	V
DC Output Voltage	VOUT	0.5 to 7.0	V
Input Diode Current	IIK	20	mA
Output Diode Current (VOUT< GND; VOUT> VCC)	IOK	+20	mA
DC Output Current, per Pin	IOUT	+25	mA
DC Supply Current, VCCand GND	ICC	+50	mA
Power dissipation in still air, SC88A †	PD	200	mW
Lead temperature, 1 mm from case for 10 s	TL	260	°C
Storage temperature	Tstg	65 to +150	°C

* Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolutemaximumrated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions.
†Derating - SC88A Package: 3 mW/°C from 65°C to 125°C


Description

The MC74VHC1G03 is an advanced high speed CMOS 2input NOR gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

The internal circuit is composed of three stages, including an open drain output which provides the capability to set output switching level. This allows the MC74VHC1G03 to be used to interface 5V circuits to circuits of any voltage between V_CC and 7V using an external resistor and power supply.

The MC74VHC1G03 input structure provides protection when voltages up to 7V are applied, regardless of the supply voltage.