MC74VHC1G01

Features: • High Speed: tPD = 3.7 ns (Typ) at VCC = 5.0 V• Low Internal Power Dissipation: ICC = 1 A (Max) at TA = 25°C• Power Down Protection Provided on Inputs• Pin and Function Compatible with Other Standard Logic Families• Chip Complexity: FETs = 62• Pbͨ...

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MC74VHC1G01 Picture
SeekIC No. : 004417176 Detail

MC74VHC1G01: Features: • High Speed: tPD = 3.7 ns (Typ) at VCC = 5.0 V• Low Internal Power Dissipation: ICC = 1 A (Max) at TA = 25°C• Power Down Protection Provided on Inputs• Pin and Fun...

floor Price/Ceiling Price

Part Number:
MC74VHC1G01
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• High Speed: tPD = 3.7 ns (Typ) at VCC = 5.0 V
• Low Internal Power Dissipation: ICC = 1 A (Max) at TA = 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62
• Pb−Free Packages are Available



Pinout

  Connection Diagram


Specifications

Symbol Parameter Value Unit
VCC DC Supply Voltage 0.5 to + 7.0 V
VIN DC Input Voltage 0.5 to + 7.0 V
VOUT DC Output Voltage 0.5 to VCC +0.5 V
IIK Input Diode Current -20 mA
IOK Output Diode Current VOUT < GND;VOUT > VCC ± 20 mA
IOUT DC Output Current, per Pin 25 mA
ICC DC Supply Current, VCC and GND ± 25 mA
Tstg Storage temperature 65 to +150 °C
TL Lead Temperature, 1 mm from Case for 10 s 260 °C
TJ Junction Temperature Under Bias + 150 °C
JA Thermal Resistance SC70−5/SC−88A (Note 1)
TSOP−5
350
230
°C/W
PD Power Dissipation in Still Air at 85°C SC70−5/SC−88A
TSOP−5
150
200
mW
MSL
Moisture Sensitivity Level 1  
FR Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 @ 0.125 in  
VESD ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
>2000
> 200
N/A
V
ILATCHUP LatchUp Performance Above VCC and Below GND at 125°C (Note 5) ± 500 mA
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.



Description

The MC74VHC1G01 is an advanced high speed CMOS 2−input NAND gate with an open drain output fabricated with silicon gate CMOS technology.

The internal circuit is composed of multiple stages, including an open drain output which provides the ability to set output switching level. This allows the MC74VHC1G01 to be used to interface 5.0 V circuits to circuits of any voltage between VCC and 7.0 V using an external resistor and power supply.

The MC74VHC1G01 input structure provides protection when voltages up to 7.0 V are applied, regardless of the supply voltage.


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