MC74VHC1G00

Features:

• High Speed: t_PD = 3.0ns (Typ) at V_CC = 5V
• Low Power Dissipation: I_CC = 2A (Max) at T_A = 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Latchup Performance Exceeds 300mA
• ESD Performance: HBM > 2000V; MM > 200V, CDM > 1500V


Pinout




Specifications

Characteristics	Symbol	Value	Unit
DC Supply Voltage	VCC	0.5 to +7.0	V
DC Input Voltage	VIN	0.5 to +7.0	V
DC Output Voltage VCC = 0 High or Low State	VOUT	0.5 to 7.0 0.5 to VCC + 0.5	V
Input Diode Current	IIK	20	mA
Output Diode Current (VOUT < GND; VOUT > VCC )	IOK	+20	mA
DC Output Current, per Pin	IOUT	+25	mA
DC Supply Current, VCC and GND	ICC	+50	mA
Power dissipation in still air, SC88A †	PD	200	mW
Lead temperature, 1 mm from case for 10 s	TL	260	°C
Storage temperature	Tstg	65 to +150	°C

* Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolutemaximumrated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions.
†Derating - SC88A Package: 3 mW/°C from 65°C to 125°C


Description

The MC74VHC1G00 is an advanced high speed CMOS 2input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

The internal circuit of MC74VHC1G00 is composed of three stages, including a buffer output which provides high noise immunity and stable output.

The MC74VHC1G00 input structure provides protection when voltages up to 7V are applied, regardless of the supply voltage. This allows the MC74VHC1G00 to be used to interface 5V circuits to 3V circuits.