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MC74LVX257

Features: • High Speed: tPD = 4.5 ns (Typ) at VCC = 3.3 V• Low Power Dissipation: ICC = 4A (Max) at TA = 25°C• High Noise Immunity: VNIH = VNIL = 28% VCC• Power Down Protection Provided on Inputs• Balanced Propagation Delays• Designed for 2.0 V to 5.5 V Operatin...

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SeekIC No. : 004417129 Detail

MC74LVX257: Features: • High Speed: tPD = 4.5 ns (Typ) at VCC = 3.3 V• Low Power Dissipation: ICC = 4A (Max) at TA = 25°C• High Noise Immunity: VNIH = VNIL = 28% VCC• Power Down Protecti...

MC74LVX257 Data Sheet

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Part Number:
MC74LVX257
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High Speed: tPD = 4.5 ns (Typ) at VCC = 3.3 V
• Low Power Dissipation: ICC = 4A (Max) at TA = 25°C
• High Noise Immunity: VNIH = VNIL = 28% VCC
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Designed for 2.0 V to 5.5 V Operating Range
• Low Noise: VOLP = 0.8 V (Max)
• Pin and Function Compatible with Other Standard Logic Families
• Latchup Performance Exceeds 300 mA
• Chip Complexity: FETs = 100; Equivalent Gates = 25
• ESD Performance:
   Human Body Model > 2000 V;
   Machine Model > 200 V
• Pb−Free Packages are Available*


Pinout

Connection Diagram


Specifications

Symbol Parameter
Value
Unit
VCC Positive DC Supply Voltage
−0.5 to +7.0
V
VIN Digital Input Voltage
−0.5 to +7.0
V
VOUT DC Output Voltage
−0.5 to VCC +0.5
V
IIK Input Diode Current
-20
mA
IOK Output Diode Current
±20
mA
IOUT DC Output Current, per Pin
±25
mA
ICC DC Supply Current, VCC and GND Pins
±75
mA
PD Power Dissipation in Still Air                                      SOIC Package
                                                                                             TSSOP
200
180
mW
TSTG Storage Temperature Range
−65 to +150
VESD ESD Withstand Voltage                        Human Body Model (Note 1)
                                                                    Machine Model (Note 2)
                                                        Charged Device Model (Note 3)
>2000
>200
>2000
V
ILATCHUP Latchup Performance Above VCC and Below GND at 125 (Note 4)
±300
mA
JA Thermal Resistance, Junction−to−Ambient               SOIC Package
                                                                                             TSSOP
143
164
/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78


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