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MC74HC4052A

Features: • Fast Switching and Propagation Speeds• Low Crosstalk Between Switches• Diode Protection on All Inputs/Outputs• Analog Power Supply Range (VCC VEE) = 2.0 to 12.0 V• Digital (Control) Power Supply Range (VCC GND) = 2.0 to 6.0 V• Improved Linearity an...

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SeekIC No. : 004416973 Detail

MC74HC4052A: Features: • Fast Switching and Propagation Speeds• Low Crosstalk Between Switches• Diode Protection on All Inputs/Outputs• Analog Power Supply Range (VCC VEE) = 2.0 to 12.0 ...

MC74HC4052A Data Sheet

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Part Number:
MC74HC4052A
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Fast Switching and Propagation Speeds
• Low Crosstalk Between Switches
• Diode Protection on All Inputs/Outputs
• Analog Power Supply Range (VCC VEE) = 2.0 to 12.0 V
• Digital (Control) Power Supply Range (VCC GND) = 2.0 to 6.0 V
• Improved Linearity and Lower ON Resistance Than MetalGate Counterparts
• Low Noise
• In Compliance With the Requirements of JEDEC Standard No. 7A
• Chip Complexity: HC4051A - 184 FETs or 46 Equivalent Gates
HC4052A - 168 FETs or 42 Equivalent Gates
HC4053A - 156 FETs or 39 Equivalent Gates

• Fast Switching and Propagation Speeds
• Low Crosstalk Between Switches
• Diode Protection on All Inputs/Outputs
• Analog Power Supply Range (VCC VEE) = 2.0 to 12.0 V
• Digital (Control) Power Supply Range (VCC GND) = 2.0 to 6.0 V
• Improved Linearity and Lower ON Resistance Than MetalGate Counterparts
• Low Noise
• In Compliance With the Requirements of JEDEC Standard No. 7A
• Chip Complexity: HC4051A - 184 FETs or 46 Equivalent Gates
HC4052A - 168 FETs or 42 Equivalent Gates
HC4053A - 156 FETs or 39 Equivalent Gates




Pinout

Connection Diagram




Specifications

Symbol Parameter Value Unit
vcc DC Supply Voltage (Referenced to GND) 0.5 to +7.0 V
VIN DC Input Voltage (Referenced to GND) 0.5 to VCC + 0.5 V
VOUT DC Output Voltage (Referenced to GND) 0.5 to VCC + 0.5 V
LIN DC Input Current, per Pin ±20 mA
IOUT DC Onput Current, per Pin ±25 mA
ICC DC Supply Current Per Supply Pin ±50 mA
PD Power dissipation in still air piastic DIP
SOIC package
750
500
450

 mW
TSTG Storage Temperature 65 to +150 °C
TL Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)		 260

 °C
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating - Plastic DIP: 10 mW/C from 65 to 125C
Ceramic DIP: 10 mW/C from 100 to 125C
SOIC Package: 7 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola HighSpeed CMOS Data Book (DL129/D).




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