MC-4R96CPE6C

Features: · 184 edge connector pads with 1mm pad spacing· 96 MB Direct RDRAM storage· Each RDRAMâ has 32 banks, for 192 banks total on module· Gold plated contacts· RDRAMs use Chip Scale Package (CSP)· Serial Presence Detect support· Operates from a 2.5 V supply· Low power and powerdown self...

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MC-4R96CPE6C Picture
SeekIC No. : 004416126 Detail

MC-4R96CPE6C: Features: · 184 edge connector pads with 1mm pad spacing· 96 MB Direct RDRAM storage· Each RDRAMâ has 32 banks, for 192 banks total on module· Gold plated contacts· RDRAMs use Chip Scale Packa...

floor Price/Ceiling Price

Part Number:
MC-4R96CPE6C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

· 184 edge connector pads with 1mm pad spacing
· 96 MB Direct RDRAM storage
· Each RDRAMâ has 32 banks, for 192 banks total on module
· Gold plated contacts
· RDRAMs use Chip Scale Package (CSP)
· Serial Presence Detect support
· Operates from a 2.5 V supply
· Low power and powerdown self refresh modes
· Separate Row and Column buses for higher efficiency
· Over Drive Factor (ODF) support



Pinout

  Connection Diagram


Specifications

Symbol Parameter
Min
Max
Unit
VI,ABS
VDD,ABS
TSTORE
Voltage applied to any RSL or CMOS signal pad with respect to GND
Voltage on VDD with respect to GND
Storage temperature
-0.3
-0.5
-50
VDD + 0.3
VDD + 1.0
+100
V
V
°C

Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.




Description

The Direct Rambus RIMM MC-4R96CPE6C is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.

 MC-4R96CPE6C modules consists of six 128M Direct Rambus DRAM (Direct RDRAM™) devices ( mPD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board design technologies.

Direct RDRAM MC-4R96CPE6C are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).

 The architecture of the Direct RDRAM MC-4R96CPE6C enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95 % bus efficiency. The Direct RDRAM's MC-4R96CPE6C 32 banks support up to four simultaneous transactions per device.




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