MC-4R64FKE8S

Features:

• 160 edge connector pads with 0.65mm pad spacing
• 64MB Direct RDRAM storage
• Each RDRAM has 32 banks, for 64 banks total on module
• Gold plated contacts
• RDRAMs use Chip Scale Package (CSP)
• Serial Presence Detect support
• Operates from a 2.5V supply
• Powerdown self refresh modes
• Separate Row and Column buses for higher efficiency 
 


Pinout




Specifications

 

Symbol	Parameter	MIN.	MAX.	Unit
VI,ABS	Voltage applied to any RSL or CMOS signal pad with respect to GND	−0.3	VDD + 0.3	V
VDD,ABS	Voltage on VDD with respect to GND	−0.5	VDD + 1.0	V
TSTORE	Storage temperature	−50	+100

Description

The  Direct  Rambus  SO-RIMM  MC-4R64FKE8S  is  a  general-purpose high-performance memory module subsystem suitable  for  use  in  a  broad  range  of  applications including  computer  memory,  mobile  personal computers, networking systems, and other applications where high bandwidth and low latency are required.

MC-4R64FKE8S MC-4R64FKE8S consists of  two 288M Direct Rambus  DRAM  (Direct  RDRAM)  devices (µPD488588).  These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits.   The use of Rambus Signaling  Level  (RSL)  technology  permits 800MHz transfer rates while using conventional system and board design technologies.

Direct RDRAM MC-4R64FKE8S are capable of sustained data transfers at 1.25ns per two bytes (10ns per 16 bytes). 

The  architecture  of  the  Direct  RDRAM MC-4R64FKE8S  enables  the highest sustained bandwidth for multiple, simultaneous, randomly  addressed  memory  transactions.    The separate control and data buses with independent row and  column  control  yield  high  bus  efficiency.    The Direct RDRAM's MC-4R64FKE8S multi-bank architecture supports up to four simultaneous transactions per device.