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MC-4R64FKE6D-653

Features: • 184 edge connector pads with 1mm pad spacing • 64 MB Direct RDRAM storage • Each RDRA has 32 banks, for 64 banks total on module • Gold plated contacts • RDRAMs use Chip Scale Package (CSP) • Serial Presence Detect support • Operates fr...

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SeekIC No. : 004416118 Detail

MC-4R64FKE6D-653: Features: • 184 edge connector pads with 1mm pad spacing • 64 MB Direct RDRAM storage • Each RDRA has 32 banks, for 64 banks total on module • Gold plated contacts &#...

MC-4R64FKE6D-653 Data Sheet

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Part Number:
MC-4R64FKE6D-653
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• 184 edge connector pads with 1mm pad spacing
• 64 MB Direct RDRAM storage
• Each RDRA has 32 banks, for 64 banks total on module
• Gold plated contacts
• RDRAMs use Chip Scale Package (CSP)
• Serial Presence Detect support
• Operates from a 2.5 V supply
• Powerdown self refresh modes
• Separate Row and Column buses for higher efficiency
• Over Drive Factor (ODF) support


Specifications

Symbol
Parameter
MIN.
MAX.
Unit
VI,ABS
 Voltage applied to any RSL or CMOS signal pad with respect to GND
−0.3
VDD + 0.3
V
VDD,ABS
Voltage on VDD with respect to GND
−0.5
VDD + 1.0
V
TSTORE
Storage temperature
−50
+100



Description

The Direct Rambus RIMM MC-4R64FKE6D is a general-purpose high-performance memory module subsystem suitable for usein a broad range of applications including computer memory, personal computers, workstations, and otherapplications where high bandwidth and low latency are required. MC-4R64FKE6D modules consists of two288M Direct Rambus DRAM (Direct RDRAM) devices (µPD488588).

MC-4R64FKE6D is extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus SignalingLevel (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board design technologies.

Direct RDRAM MC-4R64FKE6D are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteenbytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,randomly addressed memory transactions. The separate control and data buses with independent rowand column control yield over 95 % bus efficiency. The Direct RDRAM's MC-4R64FKE6D 32 banks support up to foursimultaneous transactions per device.




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