MC-4R64CPE6C

Features: · 184 edge connector pads with 1mm pad spacing· 64 MB Direct RDRAM storage· Each RDRAMâ has 32 banks, for 128 banks total on module· Gold plated contacts· RDRAMs use Chip Scale Package (CSP)· Serial Presence Detect support· Operates from a 2.5 V supply· Low power and powerdown self...

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SeekIC No. : 004416117 Detail

MC-4R64CPE6C: Features: · 184 edge connector pads with 1mm pad spacing· 64 MB Direct RDRAM storage· Each RDRAMâ has 32 banks, for 128 banks total on module· Gold plated contacts· RDRAMs use Chip Scale Packa...

floor Price/Ceiling Price

Part Number:
MC-4R64CPE6C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

· 184 edge connector pads with 1mm pad spacing
· 64 MB Direct RDRAM storage
· Each RDRAMâ has 32 banks, for 128 banks total on module
· Gold plated contacts
· RDRAMs use Chip Scale Package (CSP)
· Serial Presence Detect support
· Operates from a 2.5 V supply
· Low power and powerdown self refresh modes
· Separate Row and Column buses for higher efficiency
· Over Drive Factor (ODF) support



Specifications

Symbol Parameter MIN. MAX. Unit
VI,ABS Voltage applied to any RSL or CMOS signal pad with respect to GND -0.3 VDD + 0.3 V
VDD,ABS Voltage on VDD with respect to GND -5.0 VDD + 1.0 V
TSTORE Storage temperature -50 +100 °C



Description

The Direct Rambus RIMM MC-4R64CPE6C is a general-purpose high-performance memory module subsystem suitable for
use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.

MC-4R64CPE6C modules consists of four 128M Direct Rambus DRAM (Direct RDRAM™) devices (mPD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling
Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and
board design technologies.

Direct RDRAM MC-4R64CPE6C are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).

The architecture o f the Direct RDRAM MC-4R64CPE6C enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95 % bus efficiency. The Direct RDRAM's MC-4R64CPE6C 32 banks support up to four simultaneous  ransactions per device.




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