MC-4R512FKK6K

Features: • 512MB Direct RDRAM storage and 512 banks total on module• 2 independent Direct RDRAM channels, 1 pass through and 1 terminated on 32-bit RIMM module• High speed 800MHz Direct RDRAM devices• 232 edge connector pads with 1mm pad spacing- Module PCB size: 1...

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SeekIC No. : 004416113 Detail

MC-4R512FKK6K: Features: • 512MB Direct RDRAM storage and 512 banks total on module• 2 independent Direct RDRAM channels, 1 pass through and 1 terminated on 32-bit RIMM module• High speed 800MHz ...

floor Price/Ceiling Price

Part Number:
MC-4R512FKK6K
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• 512MB Direct RDRAM storage and 512 banks total on module
• 2 independent Direct RDRAM channels, 1 pass through and 1 terminated on 32-bit RIMM module
• High speed 800MHz Direct RDRAM devices
• 232 edge connector pads with 1mm pad spacing
-  Module PCB size: 133.35mm × 39.925mm ×1.27mm
 - Gold plated edge connector pads contacts
• Serial Presence Detect (SPD) support
• Operates from a 2.5V (±5%) supply
• Low power and power down self refresh modes
• Separate Row and Column buses for higher efficiency



Application

Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.However, users are instructed to contact Elpida Memory's sales office before using the product in aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment, medical equipment for life support, or other such application in which especially high quality and reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk of bodily injury.




Specifications

Symbol Parameter MIN. MAX. Unit
VI,ABS Voltage applied to any RSL or CMOS
signal pad with respect to GND
−0.3 VDD + 0.3 V
VDD,ABS Voltage on VDD with respect to GND −0.5 VDD + 1.0 V
TSTORE Storage temperature −50 +100 °C



Description

The 32-bit Direct Rambus RIMM MC-4R512FKK6K module is a generalpurpose high-performance lines of memory modules suitable for use in a broad range of applications including computer memory, personal computers,workstations, and other applications where high bandwidth and latency are required.

The 32-bit RIMM MC-4R512FKK6K module consists of 288Mb Direct Rambus DRAM (Direct RDRAM) devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits the use of conventional system and board design technologies. The 32-bit RIMM MC-4R512FKK6K modules support 800MHz transfer rate per pin,resulting in total module bandwidth of 3.2GB/s.

The 32-bit RIMM MC-4R512FKK6K module provides two independent 16 bit memory channels to facilitate compact system design. The "Thru" Channel enters and exits the module to support a connection to or from a controller,memory slot, or termination. The "Term" Channel is terminated on the MC-4R512FKK6K and supports a connection from a controller or another memory slot.

The RDRAM® MC-4R512FKK6K architecture enables the highest sustained bandwidth for multiple, simultaneous,randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM MC-4R512FKK6K multi-bank architecture supports up to four simultaneous transactions per device.




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