MC-4R512FKE8D-840

The Direct Rambus RIMM MC-4R512FKE8D module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.

MC-4R512FKE8D modules consists of sixteen 288M Direct Rambus DRAM (Direct RDRAM) devices (PD488588). These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits.  The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board design technologies.

Direct RDRAM MC-4R512FKE8D are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes). The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed memory transactions.  The separate control and data buses with independent row and column control yield over 95 % bus efficiency.  The Direct RDRAM's MC-4R512FKE8D 32 banks support up to four simultaneous transactions per device.