MC-4R512FKE6D

The Direct Rambus RIMM MC-4R512FKE6D module is a general-purpose high-performance memory module subsystem suitable for usein a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. MC-4R512FKE6D modules consists of sixteen 288M Direct Rambus DRAM (Direct RDRAM) devices (µPD488588).

These are extremely high-speed CMOS DRAMs MC-4R512FKE6D organized as 16M words by 18 bits. The use of Rambus SignalingLevel (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system andboarddesign technologies.

Direct RDRAM MC-4R512FKE6D are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteenbytes). The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,randomly addressed memory transactions. The separate control and data buses with independent rowand column control yield over 95 % bus efficiency. The Direct RDRAM's MC-4R512FKE6D 32 banks support up to foursimultaneous transactions per device.