MC-4R512FKE6D-840

The Direct Rambus RIMM MC-4R512FKE6D module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications of MC-4R512FKE6D where high bandwidth and low latency are required.

MC-4R512FKE6D modules consists of sixteen 288M Direct Rambus DRAM (Direct RDRAM) devices (PD488588).  These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits.  The use of Rambus Signaling Level (RSL)MC-4R512FKE6D technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board design technologies.

Direct RDRAM MC-4R512FKE6D are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes). The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed memory transactions.  The separate control and data of MC-4R512FKE6D buses with independent row and column control yield over 95 % bus efficiency.  The Direct RDRAM's 32 banks support up to four simultaneous transactions per device.