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MC-4R192CPE6C

Features: · 184 edge connector pads with 1mm pad spacing· 192 MB Direct RDRAM storage· Each RDRAMâ has 32 banks, for 384 banks total on module· Gold plated contacts· RDRAMs use Chip Scale Package (CSP)· Serial Presence Detect support· Operates from a 2.5 V supply· Low power and powerdown sel...

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SeekIC No. : 004416098 Detail

MC-4R192CPE6C: Features: · 184 edge connector pads with 1mm pad spacing· 192 MB Direct RDRAM storage· Each RDRAMâ has 32 banks, for 384 banks total on module· Gold plated contacts· RDRAMs use Chip Scale Pack...

MC-4R192CPE6C Data Sheet

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Part Number:
MC-4R192CPE6C
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· 184 edge connector pads with 1mm pad spacing
· 192 MB Direct RDRAM storage
· Each RDRAMâ has 32 banks, for 384 banks total on module
· Gold plated contacts
· RDRAMs use Chip Scale Package (CSP)
· Serial Presence Detect support
· Operates from a 2.5 V supply
· Low power and powerdown self refresh modes
· Separate Row and Column buses for higher efficiency
· Over Drive Factor (ODF) support


Specifications

Symbol Parameter MIN. MAX. Unit
VI,ABS Voltage applied to any RSL or CMOS signal pad with respect to GND -0.3 VDD + 0.3 V
VDD,ABS Voltage on VDD with respect to GND -5.0 VDD + 1.0 V
TSTORE Storage temperature -50 +100 °C



Description

The Direct Rambus RIMM MC-4R192CPE6C is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.

MC-4R192CPE6C modules consists of twelve 128M Direct Rambus DRAM (Direct RDRAM™) MC-4R192CPE6C (mPD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board design technologies.

Direct RDRAM MC-4R192CPE6C are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).

The architecture of the Direct RDRAM MC-4R192CPE6C enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions per device.




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