MC-4R128FKE8S

Features:

• 160 edge connector pads with 0.65mm pad spacing
• 128 MB Direct RDRAM storage
• Each RDRAM has 32 banks, for 128 banks total on module
• Gold plated contacts
• RDRAMs use Chip Scale Package (CSP)
• Serial Presence Detect support
• Operates from a 2.5 V supply
• Powerdown self refresh modes
• Separate Row and Column buses for higher efficiency


Pinout




Specifications

Symbol	Parameter	MIN.	MAX.	Unit
VI,ABS	Voltage applied to any RSL or CMOS signal pad with respect to GND	−0.3	VDD + 0.3	V
VDD,ABS	Voltage on VDD with respect to GND	−0.5	VDD + 1.0	V
TSTORE	Storage temperature	−50	+100	°C

Description

The Direct Rambus SO-RIMM MC-4R128FKE8S is a general-purpose high-performance memory module subsystem suitable or use in a broad range of applications including computer memory, mobile personal computers, networking systems, and other applications where high bandwidth and low latency are required.

MC-4R128FKE8S MC-4R128FKE8S consists of four 288M Direct Rambus DRAM (Direct RDRAM) devices (µPD488588).  These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits.  The use of Rambus Signaling Level (RSL) technology permits 800MHz transfer rates while using conventional system and board design technologies.

Direct RDRAM MC-4R128FKE8S are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per 16 bytes).

The architecture of the Direct RDRAM MC-4R128FKE8S enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed memory transactions.  The separate control and data buses with independent row and column control yield high bus efficiency.  The Direct RDRAM's multi-bank architecture supports up to four simultaneous  transactions per device.