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MC-4R128FKE8D

Features: • 184 edge connector pads with 1mm pad spacing • 128 MB Direct RDRAM storage • Each RDRA has 32 banks, for 128 banks total on module • Gold plated contacts • RDRAMs use Chip Scale Package (CSP) • Serial Presence Detect support • Operates from a 2...

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SeekIC No. : 004416092 Detail

MC-4R128FKE8D: Features: • 184 edge connector pads with 1mm pad spacing • 128 MB Direct RDRAM storage • Each RDRA has 32 banks, for 128 banks total on module • Gold plated contacts • ...

MC-4R128FKE8D Data Sheet

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Part Number:
MC-4R128FKE8D
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• 184 edge connector pads with 1mm pad spacing
• 128 MB Direct RDRAM storage
• Each RDRA has 32 banks, for 128 banks total on module
• Gold plated contacts
• RDRAMs use Chip Scale Package (CSP)
• Serial Presence Detect support
• Operates from a 2.5 V supply
• Powerdown self refresh modes
• Separate Row and Column buses for higher efficiency
• Over Drive Factor (ODF) support


Specifications

Symbol
Parameter
MIN.
MAX.
Unit
VI,ABS
Voltage applied to any RSL or CMOS signal pad with respect to GND
−0.3
VDD + 0.3
V
VDD,ABS
Voltage on VDD with respect to GND
−0.5
VDD + 1.0
V
TSTORE
 Storage temperature
−50
+100
°C



Description

The Direct Rambus RIMM MC-4R128FKE8D is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.

MC-4R128FKE8D modules consists of four 288M Direct Rambus DRAM (Direct RDRAM) devices (µPD488588). These areextremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board designtechnologies.

Direct RDRAM MC-4R128FKE8D are capable of sustained data transfers at 1.25 ns per two bytes (10 ns persixteenbytes).
The architecture of the Direct RDRAM MC-4R128FKE8D enables the highest sustained bandwidth for multiple, simultaneous,randomly addressed memory transactions. The separate control and data buses with independent rowand column control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to foursimultaneous transactions per device.




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