Position: Home  > All Categories> Integrated Circuits (ICs) > MC-4R128FKE6D

MC-4R128FKE6D

Features: • 184 edge connector pads with 1mm pad spacing • 128 MB Direct RDRAM storage • Each RDRAMhas 32 banks, for 128 banks total on module • Gold plated contacts • RDRAMs use Chip Scale Package (CSP) • Serial Presence Detect support • Operates from a 2...

product image

MC-4R128FKE6D Picture
See larger image
SeekIC No. : 004416090 Detail

MC-4R128FKE6D: Features: • 184 edge connector pads with 1mm pad spacing • 128 MB Direct RDRAM storage • Each RDRAMhas 32 banks, for 128 banks total on module • Gold plated contacts • ...

MC-4R128FKE6D Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
MC-4R128FKE6D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 184 edge connector pads with 1mm pad spacing
• 128 MB Direct RDRAM storage
• Each RDRAM has 32 banks, for 128 banks total on module
• Gold plated contacts
• RDRAMs use Chip Scale Package (CSP)
• Serial Presence Detect support
• Operates from a 2.5 V supply
• Powerdown self refresh modes
• Separate Row and Column buses for higher efficiency
• Over Drive Factor (ODF) support


Specifications

Symbol

Parameter

MIN.

MAX.

Unit

VI,ABS

Voltage applied to any RSL or CMOS signal pad with respect to GND

−0.3

VDD + 0.3

V

VDD,ABS Voltage on VDD with respect to GND

−0.5

VDD + 1.0

V

TSTORE Storage temperature

−50

+100

°C




Description

The Direct Rambus RIMM MC-4R128FKE6D module is a general-purpose high-performance memory module subsystem suitable foruse in a broad range of applications including computer memory, personal computers, workstations, and otherapplications of MC-4R128FKE6D where high bandwidth and low latency are required.

MC-4R128FKE6D modules consists of four 288M Direct Rambus DRAM (Direct RDRAM) devices (µPD488588). These areextremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL)technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board design technologies.

Direct RDRAM dMC-4R128FKE6D are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteenbytes).
The architecture of the Direct RDRAM MC-4R128FKE6D enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed memory transactions. The separate control and data buses with independent row and columncontrol yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneoustransactions per device.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Circuit Protection
A50QS75-4Y
F-17*77
Optoelectronics
SFH7770
TLP423J
Optical Inspection Equipment
AA924
A21K4B
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
View more